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this is information on a product in full production. may 2013 docid15696 rev 3 1/23 23 std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 n-channel 950 v, 3 typ., 4 a zener-protected supermesh3? power mosfet in dpak, to-220fp, to-220 and ipak packages datasheet ? production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely large avalanche performance ? gate charge minimized ? very low intrinsic capacitances ? zener-protected applications ? switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. d(2, tab) g(1) s(3) am01476v1 1 2 3 ta b to-220 to-220fp 3 2 1 ta b dpak 1 3 ta b 1 2 3 order codes v ds r ds(on) max i d p tot std5n95k3 950 v 3.5 4 a 90 w stf5n95k3 25 w STP5N95K3 90 w stu5n95k3 90 w table 1. device summary order codes marking package packaging std5n95k3 5n95k3 dpak tape and reel stf5n95k3 to-220fp tube STP5N95K3 to-220 stu5n95k3 ipak www.st.com
contents std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 2/23 docid15696 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 docid15696 rev 3 3/23 std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp to-220 ipak v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 4 4 (1) 1. limited by maximum junction temperature 4a i d drain current (continuous) at t c = 100 c 3 3 (1) 3a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 16 16 (1) 16 a p tot total dissipation at t c = 25 c 90 25 90 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 100 mj dv/dt (3) 3. i sd 4 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 5 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s,t c = 25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit dpak to-220fp to-220 ipak r thj-case thermal resistance junction-case max 1.39 5 1.39 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w electrical characteristics std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 4/23 docid15696 rev 3 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = 950 v v ds = 950 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2 a 3 3.5 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 460 - pf c oss output capacitance - 38 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 760 v, v gs = 0 - 970 - pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 760 v, v gs = 0 - 15 - pf r g gate input resistance f=1 mhz , i d = 0 - 5.5 - q g total gate charge v dd = 760 v, i d = 4 a, v gs = 10 v (see figure 20) -19-nc q gs gate-source charge - 4.7 - nc q gd gate-drain charge - 12 - nc docid15696 rev 3 5/23 std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 electrical characteristics the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 475 v, i d = 2 a, r g = 4.7 , v gs = 10 v (see figure 19) -17 -ns t r rise time - 7 - ns t d(off) turn-off-delay time - 32 - ns t f fall time - 18 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 16 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v (see figure 21) -410 ns q rr reverse recovery charge - 3.5 c i rrm reverse recovery current - 17 a t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 21) -516 ns q rr reverse recovery charge - 4.1 c i rrm reverse recovery current - 16 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - - v electrical characteristics std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 6/23 docid15696 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for ipak, dpak figure 3. thermal impedance for ipak, dpak i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse 0.01 am05586v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v ? v p v p v 7 m ? & 7 f ? & 6 l q o j h s x o v h $ 0 y figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q ? v ? v p v p v 7 m ? & 7 f ? & 6 l q o j h s x o v h $ 0 y docid15696 rev 3 7/23 std5n95k3, stf5n95k3, STP5N95K3, stu5n95k3 electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy , ' 9 ' 6 9 $ 9 9 9 * 6 9 $ 0 y , ' 9 * 6 9 $ 9 ' 6 9 $ 0 y 9 * 6 4 j q & |